Analysis of Mo Sidewall Ohmic Contacts to InGaAs Fins

We present a novel test structure for the study of sidewall ohmic contacts to III–V fins FinFETs. apply it characterization impact digital etch (DE), used trim fin width, and thermal annealing on contact resistivity Mo/ $\text{n}^{+}$ -InGaAs contacts. To obtain contacts, we leave in place mask that is define reactive ion etching process deposit conformal Mo around them. model describes well electrical characteristics structure. In our results, find specific acid DE or number cycles are performed have minor resistivity. Thermal found significantly improve resistivity, with best value $3.7~ \pm ~0.2~ {\Omega } \cdot {\mu \text{m}^{{2}}$ obtained after at 400 °C. This about three times higher than reported this technology wrapping top surfaces fins, $1.3~ }\text{m}^{{2}}$ . Also, width non-conductive region under surface contact, which term “deadzone,” can be mitigated by annealing. Our work highlights importance understanding formation future high-performance InGaAs